退火温度对Cu膜微结构与应力的影响  

Microstructure and Residual Stress of Cu Films Annealed at Different Temperatures

作　　者：雒向东[1,2] 罗崇泰[1] 

机构地区：[1]中国空间技术研究院兰州物理研究所,兰州730000 [2]兰州城市学院培黎工程技术学院,兰州730070

出　　处：《桂林工学院学报》2009年第3期327-330,共4页Journal of Guilin University of Technology

基　　金：甘肃省自然科学基金暨中青年科学基金项目(3ZS052-B25-033)

摘　　要：采用磁控溅射工艺在Si基片上沉积500 nm厚Cu膜,并在不同温度下进行快速退火处理。用X射线衍射仪、扫描电镜、光学相移方法研究薄膜的微结构与应力。结果表明:随着退火温度T增加,Cu(111)择优取向系数δCu(111)不断减小,薄膜的Cu(111)/Cu(200)取向组成比值减小;在T=773K条件下退火的薄膜形成了显著的空洞与裂纹;当T在小于673 K范围内增加时,薄膜应力由拉应力不断减小继而转变为压应力,而当T=773 K时,薄膜又呈现出较大的拉应力。500 nm-thick Cu thin films are deposited on Si substrates by magnetron sputtering technology and then annealed under different temperatures.Film microstructure and residual stress are investigated by X-ray diffraction（XRD）,scanning electron microscope（SEM）,and optical phase-shift technology.The results show that with the increase of T,the intensity ratio of Cu（111）/Cu（200） decreases and the film grain size increases.When the film annealed at T=773 K,film defect such as hole and crack can be found.With T increasing in the range of 〈673 K,the tensile stress changes to compressive stress gradually.However,an obvious tensile stress can be found when the film annealed at T=773 K.

关 键 词：铜膜 微结构 残余应力 退火 

分 类 号：TN305.8[电子电信—物理电子学] TB43[一般工业技术]