应用NAND型闪存的高速大容量图像存储器  

High speed and high capacity image recorder based on NAND flash

作　　者：余辉龙[1,2] 何昕[1] 魏仲慧[1] 王东鹤[1,2] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033 [2]中国科学院研究生院,北京100039

出　　处：《光学精密工程》2009年第10期2548-2554,共7页Optics and Precision Engineering

基　　金：国家863高技术研究发展计划资助项目(No.2007AA12Z113)

摘　　要：针对单片闪存存储速度低,容量小,且存在无效块的问题,提出了一种高速大容量图像存储器的可靠性存储方案。通过分析闪存的组织结构和特征,并区分闪存写入无效块和非写入无效块,提出了基于CAM的数据分类匹配检测机制,以提高无效块信息匹配速度,并采用SRAM阵列冗余备份防止数据写入错误。在此基础上,提出了具有双总线结构的双流水线机制,多个流水线级出现写入无效块时,不中断流水线,保证存储器写入速度。通过搭建硬件平台进行实验测试,结果表明,该方法能够在5个系统时钟周期内实现无效块匹配,其持续存储速度达到960 Mb/s,持续读取速度达到1.152 Gb/s,擦除速度达到27.3 Gb/s,系统存储容量为80 GB。In consideration of the low speed, small capacity and invalid block existing in a NAND flash, the reliability storage solutions of a high speed and high capacity image recorder based on NAND flash are proposed. After analyzing the structure and characteristics of NAND flash and sepa- rating written invalid block from non-written invalid blocks in the flash, the classified data matching and detection mechanism based on CAM are presented to raise the invalid block information matching speed,and a SRAM array backup is adopted to prevent data writing errors. Based on this, a dual pipe- lining mechanism based on a dual bus structure is proposed to prevent the interruption of writing pipe- lining when the invalid block is occurred in multiple pipelining grade during writing. An experiment based on a hardware platform is carried out,which indicates that the algorithm can identify the invalid blocks in 5 system clock periods and can offer the consistent storage speed of 960 Mb/s, consistent read speed of 1. 152 Gb/s and the erasing speed up to 27.3 Gb/s. Moreover,the system storage capaci- ty is up to 80 GB.

关 键 词：无效块管理 内容可寻址存储器 冗余备份 双流水线 双总线结构 

分 类 号：TP333.5[自动化与计算机技术—计算机系统结构]