AlInAs/InP异质隧道结的设计与器件应用  

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

作　　者：刘成[1,2] 曹春芳[1] 劳燕锋[1] 曹萌[1] 吴惠桢[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]上海空间电源研究所,上海200233

出　　处：《半导体光电》2009年第5期691-695,699,共6页Semiconductor Optoelectronics

基　　金：国家"973"计划项目(2003CB314903)

摘　　要：应用高掺杂pn结和异质结能带理论,计算了AlInAs/InP异质隧道结的电学特性,发现其性能优于AlInAs和InP同质隧道结,并得出了掺杂浓度与隧道电流的关系曲线。采用气态源分子束外延(GSMBE)设备生长了面电阻率约为10-4Ω.cm2的AlInAs/InP异质隧道结结构,并应用于制作1.3μm垂直腔面发射激光器(VCSEL),器件在室温下脉冲激射。By using high doping pn junction and heterojunction energy band model, electrical properties of AIlnAs/InP tunnel junction are calculated. It is found that AIlnAs/InP hetero-tunnel junction is superior to AllnAs or InP homo-tunnel junction, and the influence of doping level on the tunneling current is discussed. AllnAs/InP tunnel junction structures are grown by gas-source molecular-beam epitaxy（GSMBE）with the specific contact resistivity of about 10^-4Ω·cm^2. Then such structures are adopted in the fabrication of 1.3 μm vertical-cavity surface-emitting lasers（VCSEL）.

关 键 词：异质隧道结 垂直腔面发射激光器 光电特性 

分 类 号：TN248.4[电子电信—物理电子学]