衬底温度对磁控溅射法制备的ZnO∶In薄膜光电性能的影响  

Effects of Substrate Temperature on Optoelectronic Properties of ZnO∶In Film Prepared by RF Magnetron Sputtering

作　　者：杨小飞[1] 方亮[1,2] 彭丽萍[1] 黄秋柳[1] 周科[1] 孔春阳[3] 

机构地区：[1]重庆大学应用物理系,重庆400030 [2]重庆大学光电技术及系统教育部重点实验室,重庆400030 [3]重庆师范大学物理系,重庆400046

出　　处：《半导体光电》2009年第5期711-714,共4页Semiconductor Optoelectronics

基　　金：重庆大学研究生创新基金项目(200904A1B0010314);重庆大学"211工程"三期创新人才培养计划建设项目(S-09/09)

摘　　要：以粉末靶为溅射源,采用射频磁控溅射法在玻璃衬底上制备掺铟氧化锌(ZnO∶In)透明导电膜。利用X射线衍射仪、原子力显微镜、霍尔测试仪,以及分光光度计等对不同衬底温度下生长的ZnO∶In薄膜的结构、光电性能进行表征。结果表明,所有制备的ZnO∶In薄膜均为六角纤锌矿结构的多晶膜,具有(002)择优取向。ZnO∶In薄膜的电阻率随着衬底温度的升高先减小后增大,当衬底温度为100℃时,薄膜的最低电阻率为3.18×10-3Ω.cm。制备的薄膜可见光范围内透过率均在85%以上。Indium doped zinc oxide （ZnO ： In） films were deposited on glass substrates by RF magnetron sputtering method using a powder target. The influence of the substrate temperature on the structure, optical and electrical properties was investigated by X-ray diffraction （XRD）, atom force microscope （AFM）, Hall measurement and optical transmission spectroscopy. The results show all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the （002） direction, and the grain size is about 22-29 nm. The conductivity of the ZnO ： In films change with the substrate temperature, and the lowest electrical resistivity is about 3.18×10^-3Ω·cm for the samples deposited at substrate temperature 100℃. The transmittance of our films in the visible range is all higher than 85%.

关 键 词：铟掺杂氧化锌薄膜 磁控溅射 光电性能 透明导电膜 

分 类 号：O484.1[理学—固体物理]