BESⅢ飞行时间电子学电荷测量电路的温度补偿  

Temperature Compensation for Charge Measurement of BESⅢ TOF Electronics

作　　者：封常青[1] 刘树彬[1] 王进红[1] 安琪[1] 

机构地区：[1]中国科学技术大学近代物理系,中国科学院核探测技术与核电子学重点实验室,合肥230026

出　　处：《核电子学与探测技术》2009年第5期1088-1092,共5页Nuclear Electronics & Detection Technology

基　　金：国家大科学工程北京正负电子对撞机升级项目(BEPCII-UDDETF-309-HT182/2004)资助;国家自然科学基金资助(编号:10405023)

摘　　要：介绍了一种利用补偿二极管实现的,针对非门控积分电路的温度补偿方法,它已成功地应用于BESⅢ飞行时间电子学的电荷测量电路中。经测试,采用该补偿方案后,对于30℃-50℃范围内的温度变化,和200mV到5000mV的输入信号动态范围,电荷测量电路的温度系数约0.6mV/℃,远好于补偿前的性能,且满足BESⅢ工程设计指标。A temperature compensation method using compensation-diode is described. It is designed for non-gated integrated circuitry for charge measurement of BESⅢ time of flight electronics. During a dynamic range of input signal amplitude from 200mV to 5000mV and temperature from 30℃ to 50℃ the temperature coefficient of charge measurement is about 0. 6mV/℃, which is much better than the performance of a non-compensation circuitry and meets the requirement of BFSⅢ Droieet.

关 键 词：BESⅢ TOF电荷测量 温度补偿 

分 类 号：TL824[核科学技术—核技术及应用]