离子注入技术现状与发展趋势  

The Technology Status and Development Trend of Ion Implantation

作　　者：本刊编辑部 

出　　处：《电子工业专用设备》2009年第10期1-8,共8页Equipment for Electronic Products Manufacturing

摘　　要：离子注入制程已成为器件设计的最前端工作,现在更被视为实现32nm和22nm晶体管制程的推动要素。器件漏电流、浅结面制作,器件尺寸缩小,以及急速增加成本的挑战,正在限制摩尔定律的延伸。针对32nm节点离子注入制程器件的工艺要求,介绍了离子注入设备的发展方向。The ion implantation process has become a front-end work of device design, and now even been viewed as the realization of 32 - 22 nanometer transistor process driven element. The device drain current, shallow junction implantation, the device dimensions shrink, as well as the challenges of rapid increase in costs, are limiting the extension of Moore＇s Law. This paper describes the direction of development of ion implantation equipment in connection with the 32 nm node device ion implantation process technological requirements.

关 键 词：32 nm节点器件 漏电流控制 超浅结注入 大束流低能注入 单晶片注入 机械扫描 

分 类 号：TN305.3[电子电信—物理电子学]