Preparation and Characteristics of Cu/Al_2O_3/MgF_2/Au Tunnel Junction  

作　　者：王茂祥 

机构地区：[1]School of Management and Engineering, Nanjing University

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2009年第5期721-724,共4页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the National Natural Science Foundation of China (No.69576006)

摘　　要：The fabrication process of Cu/Al2O3/MgF2/Au double-barrier metal/insulator/metal junction （DMIMJ） was introduced, and more stable light emission from this junction was successfully observed. The light emission physical mechanism of the junction was discussed. Results show that light emission spectrum of this structure locates at wavelength of 250-700 nm with two peaks at around 460 nm and 640 nm, which moves towards shorter wavelength region in comparison with that of the Al/Al2O3/Au junction. The light emission efficiency of this junction ranges from 0.7×10^-5-2.0×10^-5, which is 1 to 2 orders higher than that of the single-barrier Al/Al2O3/Au junction. The improved properties of this structure should be due to the electrons resonant tunneling effect in the double-barrier.The fabrication process of Cu/Al2O3/MgF2/Au double-barrier metal/insulator/metal junction （DMIMJ） was introduced, and more stable light emission from this junction was successfully observed. The light emission physical mechanism of the junction was discussed. Results show that light emission spectrum of this structure locates at wavelength of 250-700 nm with two peaks at around 460 nm and 640 nm, which moves towards shorter wavelength region in comparison with that of the Al/Al2O3/Au junction. The light emission efficiency of this junction ranges from 0.7×10^-5-2.0×10^-5, which is 1 to 2 orders higher than that of the single-barrier Al/Al2O3/Au junction. The improved properties of this structure should be due to the electrons resonant tunneling effect in the double-barrier.

关 键 词：double-barrier junction light emission negative resistance phenomenon electron resonant tunneling 

分 类 号：O611.3[理学—无机化学]