TiH_x中H的热释放行为研究  

Thermal release behavior of hydrogen in TiH_x

作　　者：魏澎[1] 赵国庆[1] 周筑颖[1] 张超[1] 杨福家[1] 丁伟[2] 

机构地区：[1]复旦大学,上海200433 [2]中国工程物理研究院核物理与化学研究所,成都610003

出　　处：《核技术》1998年第10期586-589,共4页Nuclear Techniques

摘　　要：对吸附法制备的TiH_x进行升温加热处理,发现温度大于343℃时样品中的H才有明显的释放现象.对在343℃下保温不同时间间隔的样品.用3MeV^4He弹性前冲测量法得出了样品表面H的深度分布和含量,发现表面的C沾污对H具有强烈的捕陷作用.The TiHx film prepared by chemical adsorption is annealed. When temperature is above 343℃, the concentration of hydrogen varies significantly. The depth profiles of hydrogen in TiHx samples annealed at 343℃ for different time are determined by ERD with 3MeV 4He. The mechanism of thermal release behavior of hydrogen is discussed. When the annealing time is long enough, a hydrogen peak at the sample surface can be observed. It is confirmed by high energy He+ backscattering that the carbon contaminated at the surface during the experiments or/and the film preparation can strongly influence the release behavior of hydrogen.

关 键 词：氢 热释放 弹性前冲测量 TiHx 储氢合金 

分 类 号：TG139.7[一般工业技术—材料科学与工程]