两种高频CMOS压控振荡器的设计与研究  

The Comparison and Design of Two Types of High Frequency Integrated CMOS Voltage-Controlled Oscillator

作　　者：张爱琴[1] 段吉海[1] 秦志杰[1] 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《电子科技》2009年第11期104-107,共4页Electronic Science and Technology

摘　　要：设计了两种压控振荡器,一种为反相器环形振荡器,另一种为差分环形振荡器。采用0.18μm标准CMOS工艺进行模拟,后仿真的结果显示压控环形结构的最高频率达到3.3GHz,在1.8V电源下的功耗为2.34mW。对压控振荡器的最大工作频率、功耗、压频传输特性等进行了分析比较,总结了高性能压控振荡器应具备的条件。Two types of voltage-controlled oscillator（VCO） circuits,a differential oscillator and a simple ring one are described.Simulated by a 0.18 μm CMOS technology,the result of postsimulation exhibits that the maximum frequency of the simple ring VCO is more than 3.3 GHz and the power consumption is 2.34 mW（at supply voltage of 1.8 V）.The maximum VCO s frequency,power consumption,and voltage-frequency transmission characteristics are compared,and some conditions of VCOs with good performance are summarized.

关 键 词：锁相环 CMOS 压控振荡器 相位噪声 

分 类 号：TN43[电子电信—微电子学与固体电子学]