改进结构的低压低功耗CMOS带隙基准源  

Structure-Improved Low Voltage Low Power CMOS Bandgap Reference

作　　者：王鑫[1] 李冬梅[2] 

机构地区：[1]清华大学微电子所,北京100084 [2]清华大学电子工程系,北京100084

出　　处：《半导体技术》2009年第11期1140-1143,1151,共5页Semiconductor Technology

摘　　要：提出了一种低电压、低功耗、中等精度的带隙基准源,针对电阻分流结构带隙基准源在低电源电压下应用的不足作出了一定的改进,整体电路结构简单且便于调整,同时尽可能地减少了功耗。该电路采用UMC0.18μm Mixed Mode 1.8 VCMOS工艺实现。测试结果表明,电路在1 V电源电压下,在-20-130℃的温度范围内,基准电压的温度系数为20×10-6/℃,低频时的电源电压抑制比为-54 dB,1 V电源电压下电路总功耗仅为3μW。A low voltage,low power,moderate-precision bandgap reference was presented.An improvement was made on the bandgap reference with resistive subdivision structure,in accordance with its defects in the low-voltage application.The whole structure is simple and the circuit is easy to modulate,and the power dissipation is limited as far as possible.The bandgap reference was implemented in UMC 0.18 μm mixed mode 1.8 V CMOS technology.Measurement results show that the circuit has an accuracy of 20×10-6/℃ at-20 ℃ to 130 ℃ with 1 V voltage supply and a power supply rejection ratio （PSRR） of - 54 dB at low frequency. Its total power dissipation is only 3 μW with 1 V voltage supply.

关 键 词：带隙基准源 低电压 低功耗 PTAT电流 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]