Influence of Oxygen Pressure on Structural and Sensing Properties of β-Ga2O3 Nanomaterial by Thermal Evaporation  

作　　者：马海林 范多旺 

机构地区：[1]National Engineering Research Center of Green Coating Technology and Equipment, Lanzhou Jiaotong University, Lanzhou 730070 [2]MOE Key Lab of Opto-electronic Technology and Intelligence Control, Lanzhou diaotong University Lanzhou 730070

出　　处：《Chinese Physics Letters》2009年第11期192-194,共3页中国物理快报（英文版）

摘　　要：We prepare the gallium oxide （β-Ga2O3） nanomaterials from gallium and oxygen by thermal evaporation in the argon atmosphere and research their oxygen sensing under UV illumination with different oxygen pressures. X-ray diffraction reveals that the synthesized product is monoclinic gallium oxide, it is further confirmed by electron diffraction of transmission electron microscope, and its morphology through the observation using scanning electron microscope reveals thatβ-Ga2O3 nanobelts with a breadth less than lOOnm and length of severai micrometers are synthesized under low oxygen pressure, while the nano/microbelts are synthesized under high oxygen pressure. Room-temperature oxygen sensing is tested under at 254 nm illumination and it is found that the current decreases quickly first and then slowly with oxygen pressure from low to high.We prepare the gallium oxide （β-Ga2O3） nanomaterials from gallium and oxygen by thermal evaporation in the argon atmosphere and research their oxygen sensing under UV illumination with different oxygen pressures. X-ray diffraction reveals that the synthesized product is monoclinic gallium oxide, it is further confirmed by electron diffraction of transmission electron microscope, and its morphology through the observation using scanning electron microscope reveals thatβ-Ga2O3 nanobelts with a breadth less than lOOnm and length of severai micrometers are synthesized under low oxygen pressure, while the nano/microbelts are synthesized under high oxygen pressure. Room-temperature oxygen sensing is tested under at 254 nm illumination and it is found that the current decreases quickly first and then slowly with oxygen pressure from low to high.

关 键 词：Instrumentation and measurement Semiconductors Surfaces interfaces and thin films Condensed matter: structural mechanical & thermal Nanoscale science and low-D systems 

分 类 号：TB383[一般工业技术—材料科学与工程] TM912[电气工程—电力电子与电力传动]