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作 者:沈海军[1]
机构地区:[1]南京航空航天大学航空宇航学院,南京210016
出 处:《原子与分子物理学报》2009年第5期950-954,共5页Journal of Atomic and Molecular Physics
摘 要:该论文采用Tersoff势的分子动力学方法分析了单壁(5,5)氮化硼、碳化硅、锗纳米管的熔化与轴向拉伸力学特性,讨论了三种纳米管熔化与轴向拉伸力学性能的差异.研究表明:氮化硼管熔化后呈现为网状,碳化硅管为疏松的不规则的团状,锗管呈现为紧密排布的近似球状;相同温度下,碳化硅及氮化硼纳米管的熔点、比热容以及熔化热却均远高于锗管,但系统能量却远低于锗管;三种纳米管中,氮化硼管的抗变形抗能力最大,锗管的抗变形与抗载荷能力最小,而氮化硼、碳化硅管的抗载荷能力相当.Melting and tension of single-wall BN,SiC,Ge nanotubes are calculated through the MD (molecular dynamics) method,and the conductivity-temperature and load-strain curves of the nanotubes are given. According to the obtained results, the differences in conductivity and tensile-properties of several nanotubes are investigated. The results show that the melting BN tube has the net-like configuration, the SiC tube the loose ball-like one,and the Ge tube the compact sphere-like one,the BN and SiC nanotubes have much lower energy but much higher melting temperature, specific heat and melting heat than the Ge tube,which implies that the BN and SiC nanotubes have a much better stability than the Ge-tube ;of three nanotubes the Ge tube has lowest anti-deformation and anti-load capability,the BN tube the highest anti-load capability,and the BN,SiC tubes have the comparable anti-load capability.
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