制备工艺对电子俘获材料性能的影响  

PROPERTIES OF ELECTRON TRAPPING MATERIALS INFLUENCED BY THE SYNTHESIZING CONDITIONS

作　　者：范文慧[1,2] 刘英[1,2] 王永昌[1,2] 过晓晖 张大慰[1,2] 侯洵[1,2] 

机构地区：[1]西安交通大学理学院现代物理研究所 [2]中国科学院西安光学精密机械研究所

出　　处：《光子学报》1998年第9期855-859,共5页Acta Photonica Sinica

摘　　要：利用等离子体质谱（ＩＣＰ－ＭＳ）技术测试了硫化助熔剂法和稀土直接掺杂工艺合成电子俘获材料的化学计量比，结果表明，采用稀土直接掺杂工艺合成材料的化学计量比更接近设计值；通过分析电子俘获材料的发光机制和光谱测试结果。Stoichiometry of the major activators in electron trapping materials (ETM),prepared by sulfurizing flux method (SFM) and the rare earth direct doped technique,is measured by means of the induction coupled plasma mass spectrum (ICP MS).It is shown that the rare earth direct doped technique is better than SFM.Influenced by the synthesizing conditions,the variation of valence state of the main activators,such as Eu in Cas∶Eu,Sm,is discussed by analyzing the charge trapping mechanism and spectra of ETM.

关 键 词：电子俘获材料 硫化助熔剂 稀土 掺杂工艺 

分 类 号：TN204[电子电信—物理电子学]