超薄膜外延生长的计算机模拟  

COMPUTER SIMULATION OF THE EPITAXY GROWTHIN ULTRA THIN FILMS

作　　者：吴锋民[1] 朱启鹏 吴自勤[2] 

机构地区：[1]浙江工业大学技术物理研究所 [2]中国科学技术大学基础物理中心

出　　处：《物理学报》1998年第9期1427-1435,共9页Acta Physica Sinica

摘　　要：对超薄膜的生长过程进行了计算机模拟，得到与实验结果一致的团簇生长形貌及“台阶流动”结果，分析了邻晶面偏离角对成核密度等的影响，并计算了台阶流动的阈值及团簇的分形维数．AbstractThe aggregation in ultra thin films is simulated.The growth morphologies,such as the fractal growth of clusters and the “step flow”,are obtained.The relation between the density of the clusters and the bias angle of vicinal surface is analyzed,and the threshold value of step flow and the fractal dimensions of the clusters are also calculated.The simulation results are consistent with the experiments.

关 键 词：超薄膜 薄膜器件 外延生长 计算机模拟 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]