PLZST反铁电陶瓷电场诱导相变与相稳定性的研究  

INVESTIGATION OF ELECTRIC FIELDINDUCEDANTIFERROELECTRIC TO FERROELECTRIC PHASETRANSITION AND PHASE STABILITY OF PLZST CERAMICS

作　　者：刘鹏[1] 杨同青[1] 王志宏[1] 徐卓[1] 张良莹[1] 姚熹[1] 

机构地区：[1]西安交通大学电子材料与器电研究所

出　　处：《物理学报》1998年第10期1727-1733,共7页Acta Physica Sinica

摘　　要：在三方铁电（ＦＥ）四方反铁（ＡＦＥ）的准同型相界附近制备了一系列组份为（Ｐｂ０９７Ｌａ００２）（Ｚｒ１－ｘ－ｙＳｎｙＴｉｘ）Ｏ３（ｘ＝００９或０１；０１６≤ｙ≤０３８）的反铁电陶瓷．研究了Ｓｎ含量ｙ对电场诱导ＡＦＥ→ＦＥ相变电场Ｅｃ、反铁电双电滞回线损耗ΔＥ、以及温度诱导ＦＥ→ＡＦＥ相变温度ＴＦＥ，ＡＦＥ→顺电（ＰＥ）相变温度Ｔｃ的影响．沿ＡＦＥＦＥ相界Ｔｉ含量一定的条件下，Ｅｃ随着Ｓｎ含量ｙ的增加而增大，ΔＥ减小，ＴＦＥ与Ｔｃ均降低．场诱相变的回线参量Ｅｃ，ΔＥ与相变温度ＴＦＥ和Ｔｃ相关联．在直流偏压下用原位Ｘ射线衍射表征了相变时晶格结构的变化，结果表明，当电场达到ＡＦＥ→ＦＥ相变临界场时，伴随相变的发生，晶格结构由四方相转变为三方相。AbstractWe have prepared antiferroelectric ceramics with compositions of (Pb0.97La0.02)(Zr1-x-ySnyTix)O 3(x=0.09 or 0.1; 0.16≤y≤0.38) near antiferroelectric (AFE)tetragonalferroelectric (FE)rhombohedral morphotropic phase boundary. The effects of Sn content on electric fieldinduced AFE→FE switching field Ec, double hysteresisloop width ΔE, and temperatureinduced FE→AFE phase transition temperature TFE, AFE→paraelectric (PE) transition temperature Tc are investigated. At constant Ti content x, both TEF and Tc decrease with increase of Sn content y. Electric hysteresis loop measurement demonstrates an increase of Ec and decrease of ΔE when Sn content y　increases. Furthermore, we also find that Ec and ΔE are related with TFE and Tc. In situ X-ray diffraction under dc bias field shows that symmetry changes from tetragonal phase to rhombohedral phase with an increase of c axis,and an increase of lattice volume.

关 键 词：相变 相稳定性 PLZST 电场诱导 反铁电陶瓷 

分 类 号：TM221[一般工业技术—材料科学与工程] TM28[电气工程—电工理论与新技术]