Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly(3-hexylthiophene) field-effect transistors  

作　　者：田雪雁 徐征 赵谡玲 张福俊 徐叙瑢 袁广才 李婧 孙钦军 王赟 

机构地区：[1]Institute of Optoelectronics Technology,Beijing Jiaotong University [2]Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education

出　　处：《Chinese Physics B》2009年第11期5078-5083,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos 10774013 and 10804006);the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412);the Research Fund for the Doctoral Program of Higher Education of China (Grant No 20070004024);the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031);the Beijing NOVA program (Grant No 2007A024);the the 111 of China (Grant No B08002);the research grants from the Academy of Sciences for the Developing World

摘　　要：In order to enhance the performance of regioregular poly（3-hexylthiophene） （RR-P3HT） field-effect transistors （FETs）, RR-P3HT FETs are prepared by the spin-coating method followed by vacuum placement and annealing. This paper reports that the crystal structure, the molecule interconnection, the surface morphology, and the charge carrier mobility of RR-P3HT films are affected by vacuum relaxation and annealing. The results reveal that the field-effect mobility of RR-P3HT FETs can reach 4.17×10^-2m^2/（V·s） by vacuum relaxation at room temperature due to an enhanced local self-organization. Furthermore, it reports that an appropriate annealing temperature can facilitate the crystal structure, the orientation and the interconnection of polymer molecules. These results show that the field-effect mobility of device annealed at 150 ℃ for 10 minutes in vacuum at atmosphere and followed by placement for 20 hours in vacuum at room temperature is enhanced dramatically to 9.00×10^-2m^2/（V·s）.In order to enhance the performance of regioregular poly（3-hexylthiophene） （RR-P3HT） field-effect transistors （FETs）, RR-P3HT FETs are prepared by the spin-coating method followed by vacuum placement and annealing. This paper reports that the crystal structure, the molecule interconnection, the surface morphology, and the charge carrier mobility of RR-P3HT films are affected by vacuum relaxation and annealing. The results reveal that the field-effect mobility of RR-P3HT FETs can reach 4.17×10^-2m^2/（V·s） by vacuum relaxation at room temperature due to an enhanced local self-organization. Furthermore, it reports that an appropriate annealing temperature can facilitate the crystal structure, the orientation and the interconnection of polymer molecules. These results show that the field-effect mobility of device annealed at 150 ℃ for 10 minutes in vacuum at atmosphere and followed by placement for 20 hours in vacuum at room temperature is enhanced dramatically to 9.00×10^-2m^2/（V·s）.

关 键 词：regioregular poly（3-hexylthiophene） field-effect transistors vacuum relaxation annealing field-effect mobility 

分 类 号：O73[理学—晶体学]