用MOD法制备BaPbO_3导电缓冲层  

Preparation of Conductive Buffer Layer BaPbO_3 by MOD Method

作　　者：高锋[1] 王娜[1] 李凤华[1] 戴民[1] 单玉桥[1] 樊占国[1] 刘国庆[2] 卢亚峰[2] 

机构地区：[1]东北大学,辽宁沈阳110004 [2]西北有色金属研究院,陕西西安710016

出　　处：《稀有金属材料与工程》2008年第A04期104-106,共3页Rare Metal Materials and Engineering

基　　金：国家自然科学基金委员会"青年科学基金项目"(50702012)资助

摘　　要：BaPbO3晶体为钙钛矿结构,与YBCO晶格具有一定的匹配性,属于半共格界面。在高温下化学性质稳定,不与YBCO反应,并且具有良好的导电性,因此很可能成为YBCO超导涂层的导电隔离层。实验采用乙酸钡和乙酸铅为原料,以丙酸为溶剂,制得了稳定均匀的涂层前驱液。经过旋转涂覆和适当的热处理工艺,在LaAlO3(100)单晶基底上生长了BaPbO3薄膜。经XRD分析其物相组成是单相的具有少许织构的BaPbO3;通过SEM观察其表面均匀致密,厚度约800nm;用四引线法测得薄膜室温电阻率为1×10-3Ω·cm。BaPbO3 is perovskite-type metallic oxide with cubic lattice structure. It has a certain matching property of semicoherent interface with YBCO. It doesn’t react with YBCO because of its stable chemical property at the preparing temperature of YBCO thin film. Its superior conductivity allow it as a conductive buffer candidate for superconductive layer YBCO. In this experiment, a uniform stable precursor was achieved, in which barium acetate and lead acetate were used as solutes and propionic acid as solvent. Through spin coating and suitable heating treatment, the final thin film of BaPbO3 was deposited on the LaAlO3（100） crystal substrate. The XRD shows that the film BaPbO3 was single phase and a little textured. The film has a dense and smooth surface with thickness about 800 nm observed by SEM; the thin film resistance was measured by four-point probe technique. The resistivity at room temperature is about 1×10^-3Ω·cm.

关 键 词：BaPbO3薄膜 超导 缓冲层 MOD 

分 类 号：TM262[一般工业技术—材料科学与工程]