Ce_(1-x)Sm_xO_(2-y)缓冲层的化学溶液法制备  

Fabrication of Ce_(1-x)Sm_xO_(2-y) Buffer Layers Using Chemical Solution Deposition Method

作　　者：雷和畅[1] 朱雪斌[1] 宋文海[1] 孙玉平[1] 

机构地区：[1]中国科学院固体物理研究所,安徽合肥230031

出　　处：《稀有金属材料与工程》2008年第A04期111-114,共4页Rare Metal Materials and Engineering

基　　金：国家重点基础研究发展计划(2006CB601005);国家自然科学基金(10774146;50672099;50701042);中国科学院院长奖获得者科研启动专项资金

摘　　要：采用化学溶液法在NiW(200)基带上进行了Ce1-xSmxO2-y(x=0,0.2,1)缓冲层的制备及生长机理研究。结果表明,化学溶液法可以成功制备出双轴织构的Ce1-xSmxO2-y缓冲层;在x=0和x=0.2的情况下,所制备的缓冲层有裂纹产生;但是随着x的增加,开裂现象被逐步抑制。对x=1的Sm2O3缓冲层而言,当厚度增加到120nm时依然没有产生裂纹,表明Sm2O3缓冲层可以作为单一缓冲层而得以使用。We report the fabrication and growth mechanism of Ce1-xSmxO2-y （x=0, 0.2, 1）/NiW （200） single buffer layers using chemical solution deposition method. The results show that highly biaxially-textured Ce1-xSmxO2-y buffer layer can be prepared by chemical solution deposition method. When x=0 and x=0.2, there were some cracks in the buffer layer, but the critical thickness of cracking is improved with increasing x. For x=1, namely the Sm2O3 buffer layer, no cracks appear even the thickness reaches about 120 nm. Moreover, the dense and flat microstructure, the strong out-of-plane orientation as well as in-plane orientation suggest that Sm2O3 can be used as a candidate of single buffer layer for coated conductors.

关 键 词：涂层导体 缓冲层 化学溶液法 

分 类 号：TM262[一般工业技术—材料科学与工程]