用化学溶液方法在NiW基底上制备Ce_(1-x)Zr_xO_2过渡层的研究  

Preparation of the Ce_(1-x)Zr_xO_2 Buffer Layer on the Cubic Textured NiW Substrate by Chemical Solution Deposition (CSD)

作　　者：马灵姬[1] 索红莉[1] 赵跃[1] 何东[1] 刘敏[1] 叶帅[1] 高忙忙[1] 程艳玲[1] 马麟[1] 周美玲[1] 

机构地区：[1]北京工业大学国家教育部功能材料重点实验室,北京100022

出　　处：《稀有金属材料与工程》2008年第A04期161-164,共4页Rare Metal Materials and Engineering

基　　金：国家重大基础科学研究"973"项目(2006CB601005);国家教委全国百篇优秀博士论文专项资金(200331);北京工业大学111人才工程基金项目;国家自然科学基金项目(50771003);北京市自然科学基金项目(2072004)资助

摘　　要：以乙酰丙酮铈和乙酰丙酮锆为前驱盐,以正丙酸和异丙醇为溶剂获得了前驱液。用化学溶液方法(CSD)在YSZ和自制的NiW基底上制备出了Ce1-xZrxO2过渡层。研究了前驱液成分、性质以及退火温度对其成相和取向的影响。用常规XRD分析其相成分和织构。结果表明,优化工艺下获得的纯CeO2和Zr掺杂的CeO2薄膜均具有良好的立方织构。通过X射线四环衍射仪测出的Ce1-xZrxO2过渡层的(111)Φ扫描和(200)摇摆曲线的半高宽值说明其具有很强的双轴织构。另外,Zr掺杂获得的薄膜的表面质量得到了明显改善,晶粒也得到了细化。This article presents the results of the Ce1-xZrxO2 buffer layers prepared on both YSZ and cube textured NiW substrates by the method of chemical solution deposition （CSD）. The cerium acetylacetone and zirconium acetylacetone as precursor salt and the propionic acid as well as the isopropyl alcohol as solvent were used to obtain the precursor solution. The characteristics of the precursor solution and the influence of the annealing temperatures on the CeO2 phase formation were studied. The texture of the CexZr1-xO2 film was analysed by conventional XRD and X-ray four circle diffractometers. The good values of Full Width at Half Maxium （FWHM） of （111） Phi scan and （200） rocking curve indicate that the as fabricated Ce1-xZrxO2 buffer layers have a good in-plane texture. The surface micrographys of Ce1-xZrxO2 buffer layers on both YSZ and NiW substrates were observed by the Atom Force Microscope （AFM） and the results show that the Ce1-xZrxO2 buffer layers are crack free and very dense. The surface roughnesses of Zr doped CeO2 films were strongly reduced compared to that of an un-doped CeO2 film.

关 键 词：化学溶液方法 Ce1-xZrxO2薄膜 过渡层 立方织构 掺杂 

分 类 号：TG174.4[金属学及工艺—金属表面处理]