在NiW合金基底上用化学溶液法制备CeO2/La2Zr2O7过渡层  

Fabrication of CeO_2 Caped La_2Zr_2O_7 Buffer Layers on NiW Substrate via Chemical Solution Deposition Process

作　　者：何东[1] 索红莉[1] 赵跃[1] 高忙忙[1] 刘敏[1] 叶帅[1] 祝永华[1] 王榕[1] 马麟[1] 周美玲[1] 

机构地区：[1]北京工业大学,新型功能材料教育部重点实验室,100022

出　　处：《稀有金属材料与工程》2008年第A04期165-168,共4页Rare Metal Materials and Engineering

基　　金：感谢国家自然科学基金(50771003);国家“973”计划(2006CB601005);北京市自然科学基金(2072004);国家教委全国百篇优秀博士论文专项资金(200331);北京工业大学111人才工程资助等项目的资助

摘　　要：采用化学溶液方法(CSD)在立方双轴织构的NiW合金基底上制备出了CeO2/La2Zr2O7(LZO)过渡层。利用常规XRD和XRD四环衍射仪对薄膜的取向进行了研究,结果显示CeO2薄膜和LZO薄膜具有很强的面内和面外取向,其中,CeO2(111)面φ扫描的半高宽值(FWHM)约8.35°,(200)面ω扫描的FWHM值约为6.54°。用高分辨扫描电子显微镜观察到薄膜表面致密平整,没有裂纹和孔洞。原子力显微镜测试结果表明,在30μm×30μm范围内,CeO2薄膜表面均方根粗糙度(Rrms)为5.9nm。In this paper, CeO2 caped La2Zr2O7 （LZO） buffer layers on cube-textured NiW substrates were fabricated by the method of chemical solution deposition （CSD）. The orientation of both LZO film and CeO2/LZO buffer layer was investigated using conventional XRD and X-ray four circle diffractometers. The results reveal that both the LZO film on NiW substrate and CeO2 film on LZO buffer layer grow epitaxial. The value of Full Width at Half Maximum （FWHM） of （111） φ scan of CeO2/LZO buffer layer is around 8.35°, and the FWHM of （200） ω-scan of CeO2/La2Zr2O7 buffer layer is 6.54°, indicating a good in-plan orientation of the as obtained buffer layers. It is observed by the high resolution SEM that the surface of LZO buffer layer is crack-free and very dense. The surface observed by AFM indicates a very smooth CeO2 surface with the root mean square roughness 5.9 nm measured in an area of 30 μm ×30 μm. AES depth profile results of CeO2/LZO buffer layers show that the deposited LZO film could effectively prevent the diffusion of Ni into the buffer layer.

关 键 词：CEO2 LA2ZR2O7 过渡层 化学溶液法 双轴织构 

分 类 号：TM26[一般工业技术—材料科学与工程]