GZO/Ag/GZO多层薄膜制备、结构与光电特性的研究  

Preparation,structural and photoelectric properties of GZO/Ag/GZO multilayer films

作　　者：杨田林[1,2] 张之圣[1] 宋淑梅[2] 辛艳青[2] 姜丽莉[2] 李延辉[2] 韩圣浩[2] 

机构地区：[1]天津大学电子信息工程学院,天津300072 [2]山东大学威海分校空间科学与物理学院,山东威海264209

出　　处：《功能材料》2009年第11期1767-1769,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60676041);山东省自然基金资助项目(Y2008A37)

摘　　要：采用射频磁控溅射和离子束溅射联合设备在玻璃衬底上制备出了具有良好附着性、低电阻率和高透过率的GZO/Ag/GZO(ZnO掺杂Ga2O3简称GZO)多层薄膜。X射线衍射谱表明GZO/Ag/GZO多层薄膜是多晶膜,GZO层具有ZnO的六角纤锌矿结构,最佳取向为(002)方向;Ag层是立方结构,具有(111)取向。在GZO层厚度一定的情况下,研究了Ag层厚度的变化对多层膜结构以及光电特性的影响。研究发现,当Ag层厚度为10nm时,3层膜的电阻率为9×10-5Ω.cm,在可见光范围内平均透过率达到89.7%,薄膜对应的品质因子数值为3.4×10-2Ω-1。The GZO/Ag/GZO （GZO is Ga doped ZnO） multilayer films with good adhesion, low resistivity and high transmittance, have been prepared on glass substrates by radio frequency （RF） magnetron sputtering and ion-beam sputtering. X diffraction spectra indicate that the GZO/Ag/GZO multilayer films are polyerystalline consisting of two GZO layers with the ZnO hexagonal structure having a preferred orientation of （002） and an Ag layer with the cubic structure having a preferred orientation of （111）. When the thickness of GZO layer is fixed, the influence of Ag layer thickness on structural, optical and electrical properties of multilayer films has been studied. When the thickness of Ag layer is 10nm, the GZO/Ag/GZO multilayer film, with lowest resistivity of 9×10 ^-5Ω^-1 cm, an average transmittance of 89.7~ in the visible range and a high merit figure of 3.4 ×10 ^-2Ω^-1 , has been obtained.

关 键 词：GZO/Ag/GZO 多层膜 溅射方法 透明导电膜 

分 类 号：TK513.2[动力工程及工程热物理—热能工程]