热丝CVD法金刚石薄膜宏观内应力分析  

INTRINSIC STRESS IN DIAMOND FILM GROWTH BY HOT FILAMENT CVD

作　　者：赵南方[1,2] 杨巧勤[1,2] 赵立华 李德意[1,2] 肖汉宁[1,2] 

机构地区：[1]中南工业大学粉末冶金研究所 [2]湖南大学材料测试研究中心

出　　处：《矿冶工程》1998年第3期67-69,共3页Mining and Metallurgical Engineering

摘　　要：研究了热丝ＣＶＤ法金刚石薄膜本征内应力随甲烷的体积分数（０４％～１２％）、生长温度（８００℃～１０００℃）等生长工艺参数的变化关系。在所研究的工艺参数范围内，金刚石薄膜的本征内应力为拉应力。拉应力值随着碳源浓度的升高近乎呈线性减小；在生长温度为９００℃时最小，升高或降低生长温度都会增大。这一变化关系可用薄膜中非金刚石碳含量和晶粒度大小对内应力值的影响进行解释。Intrinsic stress in diamond films growth by hot filament chemical vapor deposition was studied as a function of CH 4 concentration (0 4%～1 2%) and growth temperature (800～1000 ℃). The intrinsic stress in the diamond film was tensile. The tensile stress decreased almost linearly with CH 4 concentration, and the minimum tensile stress existed at about 900 ℃. The relationships between stress and growth parameters were explained by the effect of nondiamond phase and crytallite size on the intrinsic stress in the film.

关 键 词：金刚石薄膜 内应力 热丝CVD法 

分 类 号：O484[理学—固体物理] TQ163[理学—物理]