AgGaGeS_4晶体介电性能的初步探讨  

Preliminary Exploration on the Dielectric Properties of AgGaGeS_4 Crystal

作　　者：倪友保[1] 吴海信[1] 耿磊[1] 王振友[1] 毛明生[1] 程干超[1] 黄飞[1] 

机构地区：[1]中国科学院安徽光学精密机械研究所,合肥230031

出　　处：《人工晶体学报》2009年第5期1055-1058,共4页Journal of Synthetic Crystals

基　　金：中国科学院知识创新工程青年人才领域专项前沿项目(No.083RC11122)

摘　　要：利用本实验室生长的红外非线性晶体材料AgGaGeS4(AGGS),常温下进行腐蚀实验并观察畴结构,测试了不同频率、电压下晶体的电滞回线以及同一电压下不同频率介质的电容值。腐蚀图像显示出畴结构,畴尺寸5～10μm左右,证实AGGS为一热释电晶体。然而,室温下的电滞回线变形为一近似椭圆,介质电容与电场频率关系表现出强色散特性。本文对这一现象进行了系统分析,最后提出了进一步探索AGGS铁电性质的具体建议。Nonlinear crystal material AgGaGeS4（AGGS） was obtained by our laboratory via Bridgman method,the as-prepared AGGS crystal were characterized with chemical corrosion and dielectricity were studied by dielectric hysteresis. The corrosion figures show domain structure existing in AGGS crystals with the size 5 μm to 10 μm,which indicate that AGGS is a pyroelectric crystal. However,the dielectric hysteresis loop test resulted in distorted elliptixcal figures,the relationship between dielectric permittivity and the frequency was characterized by a strong dispersion in the dielectric permittivity measurements. In order to definitely determine if the AGGS crystal is classified as a ferroelectric material,then can be made in the form of the periodic poled configuration,further experiment schedules were proposed.

关 键 词：AGGS晶体 介电性能 畴结构 

分 类 号：O738[理学—晶体学]