室温下金刚石薄膜上沉积立方氮化硼薄膜的研究  

Study on the c-BN Films Deposited on Diamond Films at Room Temperature

作　　者：冯健[1] 徐闰[1] 汤敏燕[1] 张旭[1] 乐永康[2] 王林军[1] 

机构地区：[1]上海大学材料科学与工程学院电子信息材料系,上海200072 [2]复旦大学物理系,上海200433

出　　处：《人工晶体学报》2009年第5期1083-1087,共5页Journal of Synthetic Crystals

基　　金：上海市教育委员会优秀青年基金(No.006AZ008);国家自然科学基金(No.60577040;60877017)

摘　　要：采用射频磁控溅射技术分别在纳米与微米金刚石薄膜上制备立方氮化硼(c-BN)薄膜。金刚石薄膜由拉曼光谱(Raman)及原子力显微镜(AFM)进行表征。采用傅立叶变换红外光谱(FTIR)研究了不同沉积温度对c-BN薄膜生长的影响,结果表明在金刚石薄膜上生长c-BN不存在温度阈值,室温下生长的c-BN含量可达70%以上。当沉积温度由室温向上升高时,对于纳米金刚石薄膜衬底上生长的BN薄膜而言,其中的立方相含量反而逐渐降低。此外,随着沉积温度的降低,c-BN对应的峰位向低波数方向偏移的现象表明低温下生长的c-BN薄膜内应力较小。文中探讨了产生此现象的原因。The c-BN films were prepared by radio frequency magnetron sputtering on the nanocrystalline and microcrystalline diamond films.Diamond films were characterized by Raman spectroscopy and atomic force microscopy.Fourier transform infrared spectroscopy （FTIR） was adopted to characterize the effect of different deposition temperatures on the growth of BN films. Experimental results show that there isn＇t threshold temperature occurs on the deposition of c-BN,and the content of cubic phase in the BN films prepared at room temperature could be more than 70%. When the nanocrystalline diamond films are used as substrates,the content of cubic phase in the BN films will decrease as the temperature increasing. Furthermore,the FTIR peak corresponding to c-BN shifts to a lower wavenumber with decreasing the growth temperature,indicating that less stress appears in the c-BN films at a lower growth temperature.The reason caused this phenomenon was dissused in this paper.

关 键 词：BN薄膜 金刚石薄膜 射频磁控溅射 

分 类 号：O484.1[理学—固体物理]