单晶应力的X射线测量方法  

Stress Measurement of Single Crystal by X-ray diffraction

作　　者：王书明[1] 王超群[1] 樊志罡[1] 刘淑凤[1] 纪红[1] 

机构地区：[1]北京有色金属研究总院,北京100088

出　　处：《人工晶体学报》2009年第5期1103-1107,共5页Journal of Synthetic Crystals

摘　　要：本文介绍了X射线测量单晶应力的原理和方法,测量了Si单晶的应力,比较了双晶摇摆和三轴晶ω～2θ扫描对结果的影响,考察了计算过程中数据组个数,无应力布拉格角θ0对应力测量的影响。结果表明,采用三轴晶ω～2θ扫描比双晶摇摆更准确,多重线性回归方法对θ0依赖性很小,但测量数据组个数不应低于6。The principle and method of single crystal stress measurement via X-ray were presented. Si single crystal＇s stress was measured,the difference between double axis rocking model and triple axis ω-2θ scan model was compared,the effect of the number of measured arrays and θ0 on the stress measurement was discussed. The results showed that it was more credible measured by triple axis ω-2θ scan model than by double axis rocking model,the multiple regression analysis method could be used to calculate the stress of single crystal without stress-free θ0,the number of measured arrays should be more than 6.

关 键 词：单晶 应力 线性回归 

分 类 号：O733[理学—晶体学]