掺杂AgCl中光电子衰减特性研究  

Study on Characteristic of Photoelectron Decay in Doping AgCl

作　　者：代秀红[1] 张荣香[1] 李晓苇[1] 董国义[1] 杨少鹏[1] 韩理[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2009年第5期1142-1145,1159,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.10354001);教育部科学技术研究重点项目(No.01011);河北省自然科学基金(No.603138);河北大学科研基金资助项目(No.2005Q05)

摘　　要：利用微波吸收介电谱检测技术,检测均匀掺杂[Fe(CN)6]4-盐的立方体AgCl微晶首次曝光后的自由和浅束缚光电子的衰减时间分辨谱。实验发现,随着掺杂浓度的增加,样品中自由光电子衰减时间逐渐从未掺杂时的116ns延长至1133ns。分析光电子衰减曲线还同时得到,随着掺杂浓度的增加,光电子的前期较慢衰减过程逐渐变快,后期较快衰减过程逐渐变慢,总体上衰减时间逐渐增加,且掺杂浓度变化对后期衰减影响较大。研究表明掺杂使得晶体中引入了能总体上延缓光电子衰减的浅电子陷阱,并且随掺杂浓度的增加,浅电子陷阱特征更加明显。The decay spectra of the free and shallow-trapped photoelectrons at the first exposure time in cubic AgCl microcrystals doped with [Fe（CN）6]^4-were obtained by microwave absorption and dielectric spetrum mesurement technique. It is found that the free photoelectrons decay time increased from 116ns to 1133 ns as the doping concentration increasing. By analyzing the photoelectrons decay curve,it is also found that the doping concentration increasing,the first slower decay section becomes faster and the second faster decay section slower,as a whole the decay time increased. The variation of the doping concentration has greater impact on the photoelectrons later decay part. The result shows that the doping introduces shallow electron traps which can delay the decay process of the photoelectrons,and with the doping concentration increasing,the characteristic of shallow electron traps becomes remarkable.

关 键 词：微波吸收介电谱 掺杂浓度 光电子衰减 浅电子陷阱 

分 类 号：O734[理学—晶体学]