硅靶低温射频磁控溅射沉积氧化硅薄膜的电击穿场强  

THE BREAKDOWN FIELD OF SILICON OXIDE THIN FILM DEPOSITED BY RF-REACTIVE MAGNETRON SPUTTERING ON LOW TEMPERATURE

作　　者：金桂[1] 黄小益[1] 蒋纯志[1] 

机构地区：[1]湘南学院物电系,湖南郴州423043

出　　处：《真空与低温》2009年第3期174-177,184,共5页Vacuum and Cryogenics

基　　金：湖南省教育厅项目(08C827);湘南学院院级项目(08Y003)资助

摘　　要：采用磁控射频溅射法制备了氧化硅(SiO)x薄膜,分析了薄膜的主要成分,研究了制备工艺对薄膜电击穿场强的影响。结果表明:薄膜的主要成分是氧化硅(SiO)x;薄膜的电击穿场强随溅射功率的增加先增加后减小,在400 W左右时最大;薄膜的电击穿概率与衬底的选择有关,在单面抛光的单晶硅片与在不锈钢衬底上制备的氧化硅相比电击穿场强高且概率集中。Silicon oxide thin films have been prepared by RF-reactive magnetron sputtering method,the composition and influence of the preparing method on breakdown field were studied.The results show that the main composition is silicon oxide;The breakdown field increases with the sputtering power at first,then decreases, it reached the peak at 400 W; Compared with the film prepared on the polished silicon substrate and stainless steer sabstrate,the breakdown field is higher and breakdown field probability is more intense when the film is prepared on silicon

关 键 词：磁控射频反应溅射 表面形貌 电击穿场强 

分 类 号：TB43[一般工业技术]