剩余应变对半导体量子点边带能影响的数值分析  

Numerical Analyzing of Effect of the Residual Strain on the Energy Levels in Semiconductor Quantum Dot

作　　者：杨红波[1,2] 俞重远[3] 

机构地区：[1]天津大学理学院,天津300072 [2]天津市低维功能材料物理与制备技术重点实验室,天津300072 [3]北京邮电大学理学院,北京100876

出　　处：《电子学报》2009年第11期2476-2479,共4页Acta Electronica Sinica

基　　金：天津市自然科学基金(No.07JCYBJC06000);天津大学青年教师基金(No.5110122);国家自然科学基金(No.50672064)

摘　　要：从弹性力学的理论出发,导出了应变对量子点各边带能级影响改变量的表达式,以有限元法计算了量子点的应变;结合应变能改变量表达式给出了应变作用下各边带能改变量的变化曲线,指出应变使量子点导带级平行移动,且移动的数值只与材料的性质有关;应变作用下重空穴带和轻空穴带发生分裂,分裂的大小与材料的性质和量子点的形状都有关.It is derived from elastic theory that the expressions of shifts of the energy levels in semiconductor quantum dots. The strains of the semiconductor quantum dots are calculated by finite element method. By combing the two results, the variation of all energy levels in strain quantum dot are educed. It is pointed that the conductor band will be decreased （ or risen）. The shift of the decreased （ or risen） is decided by material of the quanttma. The heavy hole band and the light hole band are split - off in stain quantum dot. The shifts are decided by the material and the shape of the quantum dot.

关 键 词：量子点 剩余应变 边带能 有限元法 

分 类 号：TN304[电子电信—物理电子学]