超低漏电流超快恢复SiGeC功率二极管研究  

Research on SiGeC Power Diodes with Ultra-Low Leakage Current and Ultra-Fast Recovery Characteristics

作　　者：刘静[1] 高勇[1] 

机构地区：[1]西安理工大学电子工程系,陕西西安710048

出　　处：《电子学报》2009年第11期2525-2529,共5页Acta Electronica Sinica

基　　金：国家自然科学基金(No.50477012);高等学校博士学科点专向科研基金(No.20050700006)

摘　　要：提出一种超低漏电流超快恢复SiGeC p-i-n二极管结构.基于异质结电流输运机制,该SiGeC二极管实现了低通态压降下高电流密度的传输,改善了二极管的反向恢复特性,同时具有较低的反向漏电流.与少子寿命控制技术相比,该器件有效协调了降低通态电压、减小反向漏电流、缩短反向恢复时间三者之间的矛盾.对不同温度下器件反向恢复特性研究结果表明,SiGeC二极管的反向恢复时间与同结构SiGe二极管相比,350K时缩短了1/3,400K时缩短了40%以上,器件的热稳定性显著提高,降低了对器件后续制作工艺的限制,有益于功率集成.The structure of SiGeC p-i-n power diodes with ultra-low leakage current and ultra-fast recovery characteristics is presented.Based on the current transport mechanism of heterojunction, SiGeC diodes achieve a low on-state voltage drop under high current density and improved reverse recovery characteristics as well as low reverse leakage current. Compared to lifetime control technology of minority carrier, the contradictions among decreasing on-state voltage, reducing reverse leakage current and shorting reverse recovery time are coordinated effectively. The reverse recovery characteristics under different temperature show that the reverse recovery times of SiGeC diodes are shortened by 1/3 at 350K and shortened by more than 40% at 400K, compared to SiGe diodes with the same structure. The thermal stability of the devices is improved significantly, which reduces the restrictions on subsequent process and is of benefit to power integration.

关 键 词：硅锗碳 超低漏电流超快恢复 热稳定性 

分 类 号：TN313.4[电子电信—物理电子学]