薄/厚膜压电参数测量方法的研究进展  

Research Development of Measurement Methods for Piezoelectric Coefficient of Thin/Thick Film

作　　者：王青萍[1,2] 姜胜林[2] 熊龙宇[2] 曾亦可[2] 

机构地区：[1]湖北第二师范学院物理与电子信息工程系,武汉430205 [2]华中科技大学电子科学与技术系教育部敏感陶瓷工程研究中心,武汉430074

出　　处：《材料导报》2009年第21期96-100,共5页Materials Reports

基　　金：国家高技术863计划(2007AA03Z120);国家自然科学基金(60777043)

摘　　要：介绍了当前测量薄/厚压电参数的2大类方法:直接测量法(包括Berlincourt法、圆片弯曲技术、激光干涉法、扫描激光多普勒振动法、原子力显微镜法)和间接测量法(包括体声波响应和表面声波响应法、复合谐振法)。详细分析了这些方法的基本原理、测试表征、应用状况和存在的问题,比较了这些方法的优缺点。结果表明,高分辨率的双束激光干涉和表面扫描振动相结合的方法将是评估压电参数方便、准确和可靠的方法,有望成为将来表征薄/厚膜压电特性的标准方法。Two categories of measuring piezoelectric properties of thin/thick films are introduced in this paper： direct measurement（including Belincourt method, wafer flexure technique, laser interferometer method, laser scanning doppler vibrometer method, atomic force microscopy） and indirect measurement （including bulk acoustic wave and surface acoustic wave method, composite resonators）. The basic principle, measurement characterization, application status and problems are illustrated specifically in this paper, the advantages/disadvantages of these techniques are analyzed for piezoelectric applications, and the results show that combining the high resolution of the interferometer and the surface scanning ability of laser scanning vibrometer may lead to a convenient, accurate and reliable method for assessing piezoelectric coefficient. And this method may be a standard one for the development trend of measurement technologies for piezoelelctric thin/thick film.

关 键 词：薄/厚膜 压电参数 测量方法 

分 类 号：TM282[一般工业技术—材料科学与工程]