MQS1型一氧化碳气敏元件  

MQS1 carbon monoxide gas sensors

作　　者：万吉高[1] 黎鼎鑫[1] 黎淑萍[1] 谢波[2] 

机构地区：[1]昆明贵金属研究所 [2]云南广播电视大学

出　　处：《电子元件与材料》1998年第5期21-23,共3页Electronic Components And Materials

基　　金：云南省"八五"重点攻关课题

摘　　要：氧空位与材料的气敏特性有着密切的关系，气敏材料的电导率由氧空位的形成和氧化过程共同决定，氧空位浓度越大，气敏效应越明显。根据氧化锡的这一气敏机理，以９９．９９％的锡为原料，掺入合适的添加剂，制成了ＭＱＳ１型一氧化碳气敏元件。它的灵敏度高、选择性好、响应恢复快、受温度和湿度的影响小。Oxygen vacancies are closely related with the characteristics of gas sensors the conductivity of gas sensor material is decided by the formation of oxygen vacancies and the course of oxidation: the higher the concentration of oxygen vacancies, the higher the sensitivity of the gas sensors Following the mechanism, MQSI carbon monoxide gas sensors are made with high purity (99 99%) Sn and additives The sensors are characterized with its high sensitivity, excellent selectivity, fast response and recovery and high resistance to environment temperature and humidity (2 refs )

关 键 词：一氧化碳 气敏元件 氧空位 氧化锡 添加剂 

分 类 号：TN379[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]