SiO_2溶胶在电沉积法制备CuInS_2薄膜中的作用  

Effect of SiO_2 Sol on Performance of Electrodeposited CuInS_2 Thin Films

作　　者：朱立群[1] 陈海宁[1] 李卫平[1] 

机构地区：[1]北京航空航天大学空天材料与服役教育部重点实验室,北京100191

出　　处：《航空学报》2009年第11期2229-2233,共5页Acta Aeronautica et Astronautica Sinica

基　　金：航空科学基金(04H51002);教育部全国大学生创新性实验计划;北京航空航天大学大学生科研训练计划(SRTP)

摘　　要：针对目前电沉积法制备的CuInS2(CIS)薄膜存在S元素含量不足以及微观形貌差的问题,通过在普通镀液中加入SiO2溶胶,采用一步电沉积技术在ITO导电玻璃上制备Cu-In-S预制薄膜,镀液的主要组成为金属盐、硫代硫酸钠和不同浓度SiO2溶胶。在空气气氛中对Cu-In-S预制薄膜进行退火处理以获得多晶的CIS薄膜,并通过X射线衍射(XRD)、扫描电镜(SEM)、能量色散谱仪(EDS)及开路电位对CIS薄膜的结构、形貌、成分组成及光响应性能进行研究。结果表明:SiO2溶胶浓度为4mL/L时,得到的CIS薄膜的结晶度提高,同时,SiO2溶胶作用下得到的CIS薄膜的表面形貌、成分组成和光响应性能都得到改善。因此,镀液中加入SiO2溶胶有利于提高CIS薄膜的性能,尤其是浓度为4mL/L时,性能提高得最为明显。CuInS2 （CIS） thin films with sufficient sulfur content and good morphology are hard to be grown by the present electrodeposition technique. In order to deal with the problem, Cu-In-S precursor thin films are prepared on ITO glass by the one-step electrodeposition technique in the electrolyte with SiO2 sol. The electrolytic hath used for the preparation of the thin films consists of metal salts, sodium thiosulfate （Na2S2O3） and various concentrations of SiO2 sol. Then the Cu-In-S precursor thin films are annealed in air-atmosphere to ensure adequate crystallization of the CuInS2 thin films. Samples are characterized using X-ray diffraction（XRD）, scanning electron microscopy（SEM）,energy dipersive spectroscopy（EDS） and open potential. It is found that films with higher crystallinity are achieved when the concentration of SiO2 sol is 4 mL/L. Besides, the morphology, composition, and photoresponse performance are improved by adding SiO2 sol in the electrolyte. The result of the investigation indicates that the performance of the CIS thin films can be improved by adding SiO2 sol in the electrolyte, especially when the concentration of the SiO2 is 4 mL/L.

关 键 词：薄膜 CuInS2 SIO2溶胶 电沉积 光响应性能 

分 类 号：TM912.2[电气工程—电力电子与电力传动] TQ153.1[化学工程—电化学工业]