Ga掺杂纳米TiO_2薄膜的制备及其光电特性  

Ga-Doped Nano-TiO_2 Thin Films:Preparation, Optical and Electrical Properties

作　　者：刘贵昂[1,2] 张军[1,2] 何学敏[1] 

机构地区：[1]湛江师范学院物理科学与技术学院 [2]广东省高校新材料工程技术开发中心,湛江524048

出　　处：《无机化学学报》2009年第11期1939-1946,共8页Chinese Journal of Inorganic Chemistry

基　　金：广东省湛江市科技攻关计划资助项目;湛江师范学院自然科学研究资助项目

摘　　要：利用射频磁控溅射法在玻璃衬底上制备了Ga掺杂的TiO2薄膜,并在真空中于550℃下进行了2 h的退火处理。采用XRD、SEM、UV-Vis和PL光谱对薄膜进行了表征。XRD结果提示,在溅射功率为200 W,室温下制备的TiO2薄膜具有混晶结构,且退火后的晶粒有长大的趋势。SEM分析表明,掺Ga薄膜的颗粒分布得较为均匀并存在尺寸变小的趋势,且出现有利于提高光催化性能的岛状结构,其平均颗粒尺寸为50 nm。UV-Vis透过谱指出,掺Ga后的TiO2薄膜吸收边发生了明显红移,且退火后进一步红移了10～50 nm。通过接触角的测量与计算可知,550℃退火2 h后的薄膜具有良好的亲水性。光催化降解结果表明：样品具有较强的光催化能力。当用低功率（15 W）紫外灯照射8 h后,Ga掺杂的纳米TiO2薄膜样品对亚甲基蓝溶液的降解率最高可达到71.8%。The gallium-doped TiO2 thin films were deposited on glass substrate by Radio Frequency（RF） magnetron sputtering, and annealing treated in vacuum for 2 h at 550 ℃. The films were characterized using XRD, SEM, UV- Vis transmission spectraoscopy. XRD results show that the TiO2 thin films change to mixed crystal with sputtering power of 200 W at room temperature, and the grains have grown up trend after annealing. SEM results reveal that Ga-doped thin films have a more Uniform and smaller particle size distribution with an average size of 30 nm. The surface morphology is land-like. UV-Vis transmission spectra show that the absorption edge of the Ga-doped thin films occurs obviously red-shifted, and even a red-shift of 10-50 nm is found after annealing. The films have good hydrophilicity as evidenced by contact angle measurement and calculation. The samples exibit good photocatalytic activity as shown by the degradation rate of 71.8% for methylene blue solution after 8 h irradiation under low power UV lamp（15 W）.

关 键 词：纳米TIO2薄膜 Ga掺杂 退火 红移 亲水性 光催化 

分 类 号：O614.371[理学—无机化学] O614.411[理学—化学]