硅衬底Al_2O_3∶Tb^(3+)薄膜的制备及其发光性能  

Preparation and Photoluminescence Properties of Tb^(3+)-doped Al_2O_3 Films on Silicon Substrates

作　　者：石涛[1,2] 周箭[1] 申乾宏[1] 杨辉[1] 

机构地区：[1]浙江大学材料科学与工程学系,杭州310027 [2]浙江林学院理学院,临安311300

出　　处：《无机材料学报》2009年第6期1105-1109,共5页Journal of Inorganic Materials

基　　金：浙江省重大科技计划项目(2006C11029)

摘　　要：采用溶胶-凝胶法在硅衬底上制备了Al2O3:Tb3+薄膜;并采用DTA-TG、XRD、SEM、AFM及光致发光光谱对其进行了一系列表征;分析了Al2O3:Tb3+薄膜的发光机理,探讨了热处理温度和Tb3+掺杂浓度对发光性能的影响规律.研究结果表明,采用溶胶-凝胶法制备工艺,制备了高发光强度的Al2O3:Tb3+薄膜,薄膜的最佳激发波长为240nm,Tb3+的最佳掺杂浓度为5mol%(Tb2O3/Al2O3=5mol%),在240nm光激发下,最强的发射峰出现在544nm附近;并且制备的Al2O3:Tb3+薄膜表面致密、平整且无裂纹产生,表面粗糙度约为1.3nm,有利于硅基光电子器件的制备和应用.Tb3＋-doped Al2O3 films on silicon substrates were prepared by the sol-gel method.The Tb3＋-doped Al2O3 films were characterized by differential thermal analysis/thermogravimetric analysis,X-ray diffraction,scanning electron microscope,atomic force microscope and photoluminescence spectra as well.The photoluminescence mechanism of Tb3＋-doped Al2O3 films was analyzed.The effects of heat-treatment temperature and Tb3＋ ion concentration on the luminescence property of Tb3＋∶Al2O3 films were discussed.The results show that the prepared Al2O3∶Tb3＋ film has high luminescence intensity,the optimum excitation wavelength is 240nm,the optimum concentration of Tb3＋ dopant is 5mol%,and the main emission is at 544nm under excitation at 240nm.And the prepared Al2O3∶Tb3＋ film has a dense,smooth and crack-free surface texture with a roughness of less than 1.3nm.It is suggested that the film is good enough for fabrication and application of silicon based photoelectronic devices.

关 键 词：溶胶-凝胶法 Al2O3∶Tb3+ 薄膜 光致发光 

分 类 号：O648[理学—物理化学]