一种模块级的温度感知漏电功耗估计策略  

A strategy for temperature-aware leakage power estimation of macro-module

作　　者：刘晓飞[1] 张戈[2] 姚志刚[3] 肖天昊 

机构地区：[1]中国科学院计算技术研究所,北京100080 [2]中国科学院研究生院,北京100049 [3]苏州中科集成电路设计中心,苏州215021

出　　处：《高技术通讯》2009年第11期1181-1186,共6页Chinese High Technology Letters

基　　金：973计划(2005CB321600);863计划(2009AA01Z125);国家自然科学基金(60803029)资助项目

摘　　要：针对CMOS集成电路设计对芯片漏电功耗估算的要求以及漏电功耗与温度呈指数依赖关系的特点,提出了一种温度感知的模块级漏电功耗估计策略。该策略通过在漏电功耗估计过程中引入热分析技术,把模块由于自身耗能所引起的温度变化及时反馈到漏电功耗估计过程中,从而精确计算出模块在工作温度实时变化条件下的漏电功耗。其核心是在功耗估算过程中建立温度-功耗循环,此循环的基础是漏电建模和散热建模。该策略可以较好地克服传统的漏电功耗估计方法不能反映温度实时变化的影响的缺陷,有效提高门级漏电功耗估计方法的准确度。通过对实验数据进行分析,论证了这一策略的有效性。In view of the demand for leakage power estimation of the CMOS integrated circuits and the fact that leakage current increases exponentially with temperature, this paper proposes a strategy for temperature-aware leakage power estimation of macro modules at the gate level. By introducing thermal analysis technologies into the leakage power estimation, the strategy calculates the leakage power with the operational temperature changes. According to the strategy, the temperature power iteration is created based on the temperature-aware leakage power model and compact thermal model （CTM）. Of the two models, the former is characterized and the latter is formulated. Compared with the traditional leakage power estimation method which could not deal effectively with the variations of the operational temperature, this strategy could improve the accuracy of leakage power estimation at gate level. The effectiveness of the strategy was demonstrated based on the experimental data.

关 键 词：漏电流 功耗估计 温度感知设计 简化热模型 

分 类 号：TN432[电子电信—微电子学与固体电子学]