一种带热滞回功能的CMOS温度保护电路  

CMOS Thermal-Shutdown Circuit with Hysteresis

作　　者：汤洵[1] 张涛[1] 

机构地区：[1]武汉科技大学,湖北武汉430081

出　　处：《现代电子技术》2009年第22期4-6,共3页Modern Electronics Technique

基　　金：湖北省教育厅自然科学基金资助项目(D200611003)

摘　　要：基于CSMC 0.5μm CMOS工艺设计了一种带热滞回功能的高精度温度保护电路,利用晶体管PN结和PTAT电流相反的温度特性,极大地提高了温差鉴别的灵敏度。Cadence Spectre仿真结果表明,该电路对温度灵敏度高,功耗低,且其热滞回功能可有效防止热振荡。比普通单PN结的温度保护电路具有更高的灵敏度和精度,可广泛用于各种功率芯片内部。A high precision thermal - shutdown circuit with hysteresis is presented based on CSMC 0. 5μm CMOS technology. High temperature sensitivity is realized, using the composite temperature characteristics between transistor＇s PN junction and the PTAT current. It is confirmed by Cadence Spectre tools that a high sensitivity to temperature and low power consumption characteristics are reached, at the same time, the hysteresis can prevent thermal oscillation from occurring effectively. Compared with common single PN junction structure,it represents higher sensitivity and precision. Thus, it can be widely used in various power chips.

关 键 词：CMOS 温度保护 PTAT电流 热滞回 

分 类 号：TN43[电子电信—微电子学与固体电子学]