Fabrication of Co/CoO Exchange Bias System by Ion Implantation and Its Magnetic Properties  

作　　者：法涛 向清沛 姚淑德 

机构地区：[1]State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871

出　　处：《Chinese Physics Letters》2009年第12期183-185,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10875004, and the Bilateral Cooperation between China and Belgium under Grant No BIL07/02.

摘　　要：We use ion implantation as a new approach to build an anti-ferromagnetic （AFM） cluster embedded exchange bias （EB） system. Co film with thickness of 130nm is deposited on the Si （111） substrate using magnetron sputtering, 60keV O＋ is chosen to implanted into the Co film to form CoO AFM clusters coupling with Co matrix at the interface. By measuring the hysteresis loop after field-cooling, significant shifts of loop along the applied field are confirmed. When increasing the implantation dose to 2×1017/cm2 and annealed samples in N2 atmosphere, we obtain the highest HEB to 458Oe.We use ion implantation as a new approach to build an anti-ferromagnetic （AFM） cluster embedded exchange bias （EB） system. Co film with thickness of 130nm is deposited on the Si （111） substrate using magnetron sputtering, 60keV O＋ is chosen to implanted into the Co film to form CoO AFM clusters coupling with Co matrix at the interface. By measuring the hysteresis loop after field-cooling, significant shifts of loop along the applied field are confirmed. When increasing the implantation dose to 2×1017/cm2 and annealed samples in N2 atmosphere, we obtain the highest HEB to 458Oe.

关 键 词：Condensed matter: electrical magnetic and optical Surfaces interfaces and thin films 

分 类 号：O482.5[理学—固体物理] TN305.3[理学—物理]