SiO2薄膜对太阳电池电学性能的影响  

The Effect of SiO_2 Film on Electrical Property of Solar Cell

作　　者：胡宇[1] 孟凡英[1] 汪建强[1] 李翔[2] 黄建华[2] 

机构地区：[1]上海交通大学物理系太阳能研究所,上海200240 [2]上海交通大学一林洋新能源光伏研发中心,上海201109

出　　处：《上海交通大学学报》2009年第11期1828-1831,共4页Journal of Shanghai Jiaotong University

基　　金：上海市应用材料国际科技合作基金(08520741400);上海市优秀学科带头人计划(08XD14022)资助项目

摘　　要：研究了SiO2薄膜对晶体硅片的钝化作用及其对太阳电池电学性能的影响.基于PC1D软件,对SiO2/SiNx双层膜结构的硅太阳电池进行模拟,分析了硅片前表面复合速率和体寿命对电学特性的影响.模拟结果表明,当前表面复合速率大于104cm/s时,电池输出特性线性衰降;当体寿命小于30μs时,电池的开路电压和短路电流随体寿命的增加而线性增加.对比研究了SiO2、SiNx和SiO2/SiNx3种薄膜对晶体硅片的钝化效果.结果表明,SiO2/SiNx钝化的硅片在退火处理后有效少子寿命提高,具有这种双层膜的太阳电池短路电流、开路电压、光电转换效率和量子效率都有明显改善.The passivation of SiO2 film on the crystalline silicon （C-Si） wafers was discussed including the variation of solar cells property with the different passivation films. Based on the PC1D softwre, the C-Si solar cells with SiO2/SiNx were simulated, the effect of front surface recombination velocity （FSRV） and bulk lifetime （τb） on electrical properties was investigated. According to the simulation, the output electrical properties will take on linear degradation when the FSRV is greater than 104 cm/s, while Isc and Uoc will increase lineally when τb is less than 30 μs. The comparison was made in this work about the passivation effect of SiO2, SiNx and SiO2/SiNx on C-Si wafers. It is demonstrated that effective minority carrier lifetime of C-Si wafers passivated by SiO2/SiNx is increased greatly during the annealing. Furthermore, Isc, Uoc, conversion efficiency and internal quantum efficiency of solar cells with SiNx/SiO2 films are improved.

关 键 词：二氧化硅 钝化 双层膜 太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]