Cu-In系中Cu_(11)In_9相的生长动力学研究  

Study on Growth Kinetics of Cu_(11)In_9 Phase in Cu-In Binary System

作　　者：谭艳芳[1,2] 潘勇[1,2] 欧铜钢[1,2] 周兆锋[1,2] 

机构地区：[1]湘潭大学低维材料及其应用技术教育部重点实验室,湘潭411105 [2]湘潭大学材料与光电物理学院,湘潭411105

出　　处：《材料导报（纳米与新材料专辑）》2009年第2期261-263,共3页

基　　金：湖南省科技计划项目(2007GK3064)

摘　　要：采用电沉积方法在Cu基底上制备一层In薄膜得到Cu-In扩散偶。将扩散偶在T=453K、503K和553K时分别进行t=20min、40min、60min和90min的热处理。实验结果表明,在Cu-In扩散偶界面形成了不同厚度的金属间化合物层Cu_(11)In_9相;将Cu_(11)In_9相的厚度与热处理时间的关系按经验公式进行拟合,得到比例常数k和生长速率时间指数n;k和n值的大小表明,金属间化合物Cu_(11)In_9相层的生长速率受扩散和固态铜在液态铟中的溶解共同控制。In order to study the growth kinetics of the Cu11 In9 phase,Cu-In diffusion couples are prepared by electrodepositing in film on Cu substrate. The diffusion couples are annealed at temperatures of 453K, 503K and 553K, respectively for t = 20min, 40min, 60min and 90 mira The experimental results reveal that there is an intermetallic compound of Cu11 In9 with different thickness formed in the Cu-In interface. The average thickness d of the Cu11 In9 layer is mathematically described as a power function of the annealing time t. The values of proportionality coefficient k and the exponent n are obtained by linear fit. According to the values of k and exponent n,the growth of Cu11 In9 layer is not just controlled by the volume diffusion, the dissolution of Cu is also contributed to the rate-controlling process.

关 键 词：金属间化合物 Cu-In预制层 生长动力学 Cu11In9相 扩散 

分 类 号：O781[理学—晶体学] TG17[金属学及工艺—金属表面处理]