掺氮碳化硅晶体的近红外光谱研究  

Study on Near Infrared Spectrum of Nitrogen Doped SiC Crystal

作　　者：张燕[1] 连洁[1] 宋平[1] 高尚[1] 马跃进[1] 李娟[2] 

机构地区：[1]山东大学信息科学与工程学院,济南250100 [2]山东大学晶体材料国家重点实验室,济南250100

出　　处：《材料导报（纳米与新材料专辑）》2009年第2期378-380,共3页

基　　金：山东大学晶体材料国家重点实验室开放课题资助

摘　　要：分别用红外光谱测量系统和双光束分光光度计研究了室温下碳化硅单晶的光学性质,测得碳化硅晶体的透射率和反射率随波变化的关系。通过掺氮与非掺杂碳化硅各种光谱的比较,发现掺氮不仅使近红外透射率降低,也导致反射率下降,掺氮碳化硅晶体在可见光部分出现了比较明显的吸收带。此外,利用透射谱还获得非掺杂6H-SiC晶体的折射率。Optical properties of silicon carbide single crystal at room temperature are investigated by the infrared measurement system and the double beam spectrophotometer respectively, and the transmission and reflectivity of SiC as a function of wavelength are obtained. Through the comparison of the spectrum of N-doped SiC with SiC spectrum, it is found that nitrogen doping reduces the transmission and reflectivity in the near infrared range. Moreover, there is an obvious absorption band in the visible spectrum of N-doped SiC. Additionally, the refractive index of 6 H-SiC is also obtained using transmission spectrum.

关 键 词：掺氮6H—SiC 近红外反射光谱 透射光谱 光学性质 

分 类 号：O657.33[理学—分析化学] TS934.3[理学—化学]