柔性ITO衬底上铜酞菁薄膜有序生长的X射线衍射研究  

X-ray diffraction investigations of well-ordered copper phthalocyanine films deposited on flexible ITO substrate

作　　者：梁氏秋水[1] 陈振兴[1] 朱宏伟[1] 盛勇[1] 胡豫[1] 

机构地区：[1]中山大学化学与化学工程学院,广州510275

出　　处：《化工新型材料》2009年第11期40-42,共3页New Chemical Materials

基　　金：国家自然科学基金资助项目(20876182;20576141);广东省自然科学基金资助项目(7003705)

摘　　要：采用石英晶体微天平实时监测薄膜生长速率,通过控制衬底温度与薄膜生长速率,在柔性ITO导电衬底上真空蒸发沉积了铜酞菁薄膜。X射线衍射分析表明,适当提高衬底温度与薄膜生长速率,可促进薄膜的有序生长。当衬底温度为90℃,生长速率为10nm/min时,薄膜的有序度最高,薄膜晶型呈(相和(200)晶面。Through controlling substrate temperature and growth rate detected by quartz crystal microbalance measurement,CuPc films were deposited on flexible ITO substrate.X-ray diffraction investigation shown that the growth of CuPc films were strongly affected by substrate temperature and growth rate.Well-ordered CuPc film could be deposited at substrate temperature 90℃ and growth rate 10nm/min.Crystal structure of the as-prepared CuPc film was existed as（phase and（200） plane.

关 键 词：铜酞菁 X射线衍射 柔性衬底 真空蒸发沉积 有序薄膜 

分 类 号：TN304.054[电子电信—物理电子学]