CdTe量子点的制备与应用  

Preparation and Application of the CdTe Quantum Dots

作　　者：陶磊[1,2] 闫玉禧[3] 王琳琳[1,2] 曲芳芳[2] 牟颖[1,2] 

机构地区：[1]浙江大学工业控制技术国家重点实验室智能系统与控制研究所分析仪器研究中心,杭州310058 [2]吉林大学分子酶学工程教育部重点实验室,长春130021 [3]吉林大学化学学院,长春130021

出　　处：《吉林大学学报（理学版）》2009年第6期1299-1302,共4页Journal of Jilin University:Science Edition

基　　金：国家重点基础研究发展计划973项目基金(批准号:2007CB714503);国家科技基础性工作专项基金(批准号:2008IM040800);吉林省科技发展计划项目基金(批准号:20060706)

摘　　要：在微波样品处理器中,合成了量子产率为65%的CdTe量子点,发射波长为510-670 nm.该方法合成的量子点半峰宽较窄,发光强度较高.为了提高光稳定性,在制备的CdTe量子点表面包覆了硅层,得到尺寸分布较均匀的纳米粒子,并对其进行毒性检验.The CdTe quantum dots were synthesized in a microwave reactor.The photoluminescence quantum yield reaches 65% and the photoluminescence wavelength is from 510 nm to 670 nm.The CdTe quantum dots obtained with this procedure have narrower FWHM and higher photoluminescence intensity compared with those prepared with other procedures.In order to improve the photochemical stability,the CdTe quantum dots were coated with silica.The size distribution of the nanoparticles was uniform.Meanwhile,the biological toxicity of the nanoparticles was also studied.

关 键 词：碲化镉(CdTe) 量子点 微波 

分 类 号：O657[理学—分析化学] TG113.225[理学—化学]