Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals  

作　　者：倪鹤南 吴良才 宋志棠 惠春 

机构地区：[1]Research Institute of Micro/Nano Science and Technology,Shanghai Jiaotong University [2]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [3]College of Life Science Biotechnology,Shanghai Jiaotong University

出　　处：《Journal of Semiconductors》2009年第11期38-42,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.60776058);the State Key Development Program for Basic Research of China (Nos.2007CB935400,2006CB302700)

摘　　要：An MOS （metal oxide semiconductor） capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time.An MOS （metal oxide semiconductor） capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time.

关 键 词：nonvolatile memory nanocrvstal memory MOS capacitor 

分 类 号：TN386.1[电子电信—物理电子学]