Novel lateral IGBT with n-region controlled anode on SOI substrate  

作　　者：陈文锁 谢刚 张波 李泽宏 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2009年第11期47-50,共4页半导体学报（英文版）

摘　　要：A new lateral insulated-gate bipolar transistor （LIGBT） structure on SOI substrate, called an n-region controlled anode LIGBT （NCA-LIGBT）, is proposed and discussed. The n-region controlled anode concept results in fast switch speeds, efficient area usage and effective suppression NDR in forward I-V characteristics. Simulation results of the key parameters （n-region doping concentration, length, thickness and p-base doping concentration） show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state voltage drop. The proposed LIGBT is a novel device for power ICs such as PDP scan driver ICs.A new lateral insulated-gate bipolar transistor （LIGBT） structure on SOI substrate, called an n-region controlled anode LIGBT （NCA-LIGBT）, is proposed and discussed. The n-region controlled anode concept results in fast switch speeds, efficient area usage and effective suppression NDR in forward I-V characteristics. Simulation results of the key parameters （n-region doping concentration, length, thickness and p-base doping concentration） show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state voltage drop. The proposed LIGBT is a novel device for power ICs such as PDP scan driver ICs.

关 键 词：turn-off time on-state voltage drop NDR power ICs 

分 类 号：TN386[电子电信—物理电子学]