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作 者:希扎尔.乌尔.哈克 鲁富翰 蒋雪茵 张志林 张小文 张良 李俊
机构地区:[1]School of Materials Science and Engineering,Shanghai University [2]Key Laboratories of Advanced Display and System Applications,Ministry of Education,Shanghai University
出 处:《Journal of Semiconductors》2009年第11期63-66,共4页半导体学报(英文版)
基 金:Project supported by the National Natural Science Foundation of China (Nos.60477014,60577041,60776040,60777018);the National High Technology Research and Development Program of China (No.2008AA03A336)
摘 要:The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline (BPhen) doped 8-hydroxyquinolinatolithium (Liq) at various thicknesses (50-300 nm) have been estimated by using space-charge-limited current measurements. It is observed that the electron mobility of 33 wt% Liq doped BPhen approaches its true value when the thickness is more than 200 rim. The electron mobility of 33 wt% Liq doped BPhen at 300 nm is found to be -5.2 × 10^-3 cm^2/(V.s) (at 0.3 MV/cm) with weak dependence on electric field, which is about one order of magnitude higher than that of pristine BPhen (3.4 × 10^-4 cm^2/(V.s)) measured by SCLC. For the typical thickness of organic light-emitting devices, the electron mobility of doped BPhen is also investigated.The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline (BPhen) doped 8-hydroxyquinolinatolithium (Liq) at various thicknesses (50-300 nm) have been estimated by using space-charge-limited current measurements. It is observed that the electron mobility of 33 wt% Liq doped BPhen approaches its true value when the thickness is more than 200 rim. The electron mobility of 33 wt% Liq doped BPhen at 300 nm is found to be -5.2 × 10^-3 cm^2/(V.s) (at 0.3 MV/cm) with weak dependence on electric field, which is about one order of magnitude higher than that of pristine BPhen (3.4 × 10^-4 cm^2/(V.s)) measured by SCLC. For the typical thickness of organic light-emitting devices, the electron mobility of doped BPhen is also investigated.
关 键 词:DOPING electron mobility SCLC 8-hydroxyquinolinonate-lithium (Liq)
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