小能量试验推算碳化硅灭磁电阻满足温度条件的方法  

A Method to Calculate the Maximum Temperature of SiC Demagnetization Resistance for Large Energy Test Based on Small Energy Test Data

作　　者：竺士章[1] 陈新琪[1] 

机构地区：[1]浙江省电力试验研究院,浙江省杭州市310014

出　　处：《电力系统自动化》2009年第22期106-107,共2页Automation of Electric Power Systems

摘　　要：供货商提供了碳化硅灭磁电阻必须满足的能量条件和温度条件,试验发现碳化硅灭磁电阻温度分布极不均匀,温度条件成为决定性条件。文中根据实验室碳化硅灭磁电阻灭磁试验得到的大、小能量冲击下碳化硅灭磁电阻耗能与表面最大温升之间的关系,提出了采用现场发电机空载额定灭磁试验数据推算最严重灭磁情况下碳化硅灭磁电阻是否满足温度条件的方法,并提供了推算实例。The requirements of energy and temperature are provided by manufacturer. It is proved by experiments that the temperature of SiC demagnetization resistance is most uneven and the requirement of temperature is decisive. A method to calculate the maximum temperature of SiC demagnetization resistance for large energy absorption is presented based on the relation between the maximum surface temperature rise of resistance and energy consumed by SiC demagnetization resistance. The application example of this method is also presented.

关 键 词：碳化硅灭磁电阻 温度 推算 

分 类 号：TM54[电气工程—电器]