强化集肤效应抑制快速暂态过电压  

Enhancing Skin Effect for Suppression of Fast Transient Overvoltage

作　　者：刘卫东[1] 董琴[1] 孙会刚[2] 

机构地区：[1]清华大学电机系电力系统国家重点实验室,北京100084 [2]ABB集团中国研究中心,北京100016

出　　处：《高压电器》2009年第6期12-14,19,共4页High Voltage Apparatus

摘　　要：GIS隔离开关投切空载母线时能够产生特快速暂态过电压VFTO;真空开关投切电感性负载时能够产生重燃过电压。这些快速暂态过电压具有很高的变化陡度,能够在电力设备绝缘上不均匀分布,产生严重危害。提出了强化集肤效应抑制快速暂态过电压的方法,它是在导电杆上套上高频磁环串,再在磁环串外套上电阻筒,由此构成同轴结构。此结构能够产生强化的集肤效应,工频电流频率较低,主要通过导电杆,受磁环和电阻的影响很小;快速暂态过电压频率很高,受高频磁环的影响显著,被迫通过外层电阻,从而产生幅值和陡度的衰减。通过模拟试验表明,这一方法对快速暂态的抑制效果显著。GIS disconnecting bus results in very fast transient overvoltage（VFTO）, and vacuum switch switching inductive load produces multiple restriking overvohage. These fast transient overvoltages can make uneven distribution in the insulation of electric equipments, and make them overstressed. In this paper, an enhanced skin effect method is proposed to suppress the fast transient overvoltage. A coaxial structure, taking a conductor as the core, high frequency magnetic rings as inner layer, and a resistant tube as outer layer, is adopted to generate the enhanced skin effect. In this coaxial structure, the normal power frequency current takes a way through the central conductor, and the high frequency fast transient overvoltage is forced to the outer resistant layer due to the enhanced skin effect and is damped there. Significant suppression effect of the fast transient overvohage is achieved in simulation tests.

关 键 词：GIS 真空开关 操作暂态 过电压保护 

分 类 号：TM862[电气工程—高电压与绝缘技术]