掺铈铝酸钇闪烁晶体自吸收问题研究  

Investigation on the Self-Absorption of Ce:YAP Crystals

作　　者：曹顿华[1,2] 刘永建[3] 赵广军[1] 陈建玉[1,2] 董勤[1,2] 丁雨憧[1,2] 

机构地区：[1]上海光学精密机械研究所中国科学院强激光材料科学与技术重点实验室,上海201800 [2]中国科学院北京研究生院,北京100049 [3]商丘职业技术学院,河南商丘476000

出　　处：《光学学报》2009年第12期3463-3466,共4页Acta Optica Sinica

基　　金：国家自然科学基金(60708021);上海基础研究重点项目(07ZR14126);上海光技术专项(09DZ1142002)资助课题

摘　　要：研究了掺铈铝酸钇(Ce:YAP)晶体的自吸收机理以提高其光产额等闪烁性能。用提拉法生长了不同掺杂摩尔分数的Ce:YAP闪烁晶体。室温下测试了不同厚度、不同摩尔分数和不同退火条件下Ce:YAP晶体的透过、荧光、X射线激发发射等光谱特征,并对可能存在的自吸收机理进行了分析。结果表明,Ce:YAP晶体的自吸收主要由Ce4+离子与氧离子配体之间的电荷转移吸收引起,根据电荷转移吸收理论可得其吸收峰在303 nm左右,与实验结果基本一致。本实验表明通过一定的退火工艺和掺杂控制减少Ce4+离子,将能有效地使样品的吸收边蓝移,从而减少Ce:YAP晶体的自吸收,提高闪烁性能。The mechanism of self-absorption of Ce：YAP investigated in this paper. Samples with different thickness, the corresponding transmittance spectra, photoluminescence crystals which are grown by Czochralski method is concentration and annealing condition are prepared and and X-ray excited luminescence are measured at room temperature. The mechanism of self-absorption of Ce： YAP crystals is studied and the results show that the self-absorption band peaking at 303 nm is caused by charge transfer transition of Ce^4＋ ions. The study indicates that the problem of self-absorption can been resolved by effectively minimizing the concentration of Ce^4＋ ions.

关 键 词：材料 自吸收 透过率 闪烁体 CE:YAP 

分 类 号：O799[理学—晶体学]