二维光子晶体绝对带隙影响因素的分析  

The Analysis of the Influence Factors of Photonic Absolute Band Gap

作　　者：熊刚强[1] 王加贤[1] 张峻诚[1] 苏培林[1] 

机构地区：[1]华侨大学信息科学与工程学院,福建泉州362021

出　　处：《光学学报》2009年第12期3523-3526,共4页Acta Optica Sinica

基　　金：福建省自然科学基金(A0610023)资助项目

摘　　要：对二维三角形空气孔结构的光子晶体TE模、TM模的禁带重叠区,即绝对带隙的影响因素进行了系统的分析计算,得到其禁带随介电常数的差别还有填充比的变化规律:绝对带隙在r/d(空气孔半径/晶格周期)>0.4时出现,带隙宽度随r/d的增加而增加,到r/d=0.483时达到最大,往后开始减小。其中带隙中心频率值随r/d的增加而增加;把填充比r/d固定在0.483,计算绝对带隙宽度随背景材料的介电常数ε的变化规律发现:绝对带隙在背景材料的介电常数ε>8的时候出现,宽度随ε的增加而增加。Through systematic analysis and calculation of the influence factors of the absolute band gap for 2D triangle lattice photonic crystal with air pore, we found the relation between complete band gap and the two main influence factors, fill ratio, background dielectric constant. The results of calculation show that the complete band gap shows up when the fill ratio f〉0.4, increasing fill ratio leads to an increase of band gap width, the largest band gap can be obtained where f=0. 483. Further, the larger fill ratio is, the higher the central frequency of the gap is. When f= 0. 483, the complete band gap shows up when the background dielectric constant ε 〉8. The width of band gap increases with the increase of ε.

关 键 词：光子晶体 电磁波 介电常数差 绝对带隙 

分 类 号：TN252[电子电信—物理电子学]