新型多孔硅在空气环境中的电子发射和光电响应特性研究  

Performance Characteristics of Novel Porous Silicon at Ambient Condition

作　　者：沈成银[1] 席晓琴[1] 邓巧玲[1] 储焰南[1] 

机构地区：[1]中国科学院安徽光学精密机械研究所中国科学院环境光学与技术重点实验室,安徽合肥230031

出　　处：《大气与环境光学学报》2009年第6期469-473,共5页Journal of Atmospheric and Environmental Optics

基　　金：中科院仪器研制项目(20577049);安徽省优秀青年科技基金(06045098)资助

摘　　要：以开发空气环境中低电压离子源和光电器件为目的,采取光照辅助电化学阳极腐蚀法结合水热铁钝化法制备了一种新型多孔硅。研究了此多孔硅在空气环境中的电子发射性能和光电响应特性.发现这种多孔硅在空气环境中有2～3 min较稳定的电子发射性能;且具有黑暗下即有开路电压(～120 mV)和光照下有反向电压(～-30 mV)的光电响应特性。结果表明,这种新型多孔硅具有空气环境下低电压离子源和光电响应器件的开发潜力。For the development of the ionizer with low discharge voltage and the photounit at ambient condition, a novel porous silicon（PS） fabricated by combining the electrochemical anodization in HF solution under light with hydrothermally iron-passivated is introduced. The characteristics of electron emission and photo-electricity response at ambient condition were studied. The results show that this PS can emit electrons steadily for 2-3 min, and there is positive output voltage （- 120 mV） in the dark and the negative output voltage （- -30 mV） under illumination. This indicates that the novel PS holds a potential to be exploited as the ionizer with low discharge voltage and the special photounit at ambient condition.

关 键 词：多孔硅 场发射 冷阴极 光电元件 离子源 

分 类 号：TN304.1[电子电信—物理电子学]